SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To suppress occurrence of a kink characteristic of MISFET. SOLUTION: A rectangular active region 3 surrounded by an element separation groove 2 is formed on a main face of a substrate 1 formed of single crystal silicon. The active region 3 is divided into two in the right and t...

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Bibliographic Details
Main Authors TANIGAWA HIROYUKI, TOTANI TATSURO, TANAKA TOSHIHIRO, FURUKAWA KATSUHIRO
Format Patent
LanguageEnglish
Published 27.05.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To suppress occurrence of a kink characteristic of MISFET. SOLUTION: A rectangular active region 3 surrounded by an element separation groove 2 is formed on a main face of a substrate 1 formed of single crystal silicon. The active region 3 is divided into two in the right and the left by a gate electrode 4. One active region 3 constitutes a source region 5 of a MISFET (Q1) and the other constitutes a drain region 6. The gate electrode 4 of the MISFET (Q1) is formed on the active region 3. A part of the gate electrode 4 is arranged to cover a boundary part between the active region 3 on a drain region 6 side and the element separation groove 2. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020315960