SINGLE CRYSTALLINE THIN FILM

PROBLEM TO BE SOLVED: To form a single crystal thin film of higher quality when a thin film is to be formed on a base material and to provide a thin film having equal or higher characteristics as a bulk material. SOLUTION: The single crystal thin film formed on the base material consists of a substa...

Full description

Saved in:
Bibliographic Details
Main Authors OBA FUMIYASU, SUGAWARA YOSHIHIRO, IZUMI TERUO, IKUHARA YUUICHI, HIRAYAMA TSUKASA, HASEGAWA KATSUYA, SHIOBARA TORU
Format Patent
LanguageEnglish
Published 27.05.2004
Edition7
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To form a single crystal thin film of higher quality when a thin film is to be formed on a base material and to provide a thin film having equal or higher characteristics as a bulk material. SOLUTION: The single crystal thin film formed on the base material consists of a substance different from the base material and has a layer of specified atoms commonly included in the base material and in the thin film on the interface between the base material and the thin film. In the proximity region of the interface within 100 unit gratings of the thin film from the interface, crystals growing with the direction of within ±2° shifted angles on the basis of the crystal orientation of the base material occupies by ≥50%. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020318523