POLISHING LIQUID COMPOSITION

PROBLEM TO BE SOLVED: To provide a polishing liquid composition for flattening a semiconductor substrate in a short period of time, a polishing method for flattening the semiconductor substrate by using the composition, and a method of manufacturing the semiconductor device by polishing the semicond...

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Bibliographic Details
Main Authors TAKASHINA SHIGEAKI, YONEDA YASUHIRO, HAGIWARA TOSHIYA
Format Patent
LanguageEnglish
Published 20.05.2004
Edition7
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:PROBLEM TO BE SOLVED: To provide a polishing liquid composition for flattening a semiconductor substrate in a short period of time, a polishing method for flattening the semiconductor substrate by using the composition, and a method of manufacturing the semiconductor device by polishing the semiconductor substrate with the composition. SOLUTION: The polishing liquid composition contains an aqueous medium and abrasive particles. In the abrasive particles, a content of abrasive particles with a particle size of 2 to 200 nm is 50 vol.% or higher. A content of small abrasive particles with a grain size of no smaller than 2 nm and no larger than 58 nm is 40 to 75 vol.% in a total content of abrasive particles with a grain size of 2 to 200 nm. A content of middle grain size abrasive particles with a grain size of no smaller than 58 nm and no larger than 75 nm is 0 to 50 vol.% in a total content of the abrasive particles with a grain size of 2 to 200 nm. A content of large grain size abrasive particles with a grain size of 75 to 200 nm is 10 to 60 vol.% in a total content of the abrasive particles with a grain size of 2 to 200 nm. There are provided: the polishing method for flattening the semiconductor substrate by using the composition, the method of flattening the semiconductor substrate, and the method of manufacturing the semiconductor device with a step of polishing the semiconductor substrate. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20030159884