SINGLE CRYSTAL ALUMINUM NITRIDE MEMBRANE AND FORMING METHOD THEREOF, UNDERLYING SUBSTRATE FOR GROUP III NITRIDE MEMBRANE, LUMINESCENT ELEMENT, AS WELL AS SURFACE ELASTIC WAVE DEVICE

• Main Authors: NAGATA KAZUHIRO, NAKAO KO, FUKUYAMA HIROYUKI
• Format: Patent
• Language: English
• Published: 13.05.2004
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a single crystal aluminum nitride membrane for use in an underlying substrate for the group III nitiride membrane, a luminescence element as well as a surface elastic wave devise, of which the transition density is small, the lattice inconsistencies are small and the crystallinity is excellent and that is capable of forming the group III nitride membrane with excellent luminous efficacy on the membrane. SOLUTION: The single crystal aluminum nitride laminated substrate is provided by laminating the single crystal aluminum membrane to the most outer layer via an acid aluminum layer on a single crystal α-Al2O3substrate such as a sapphire substrate, wherein the transition density of the single aluminum nitride is 108/cm2. The single crystal aluminum nitride membrane as well as the single crystal aluminum laminated substrate are formed by nitriding the substrate through conducting the heat treatment in the presence of nitrogen and carbon monoxide. COPYRIGHT: (C)2004,JPO