METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can be made finer in size. SOLUTION: In an opening formed in a silicon substrate 1 for exposing a p-type region 2, a hard mask 21a composed of a BPSG film etc., is formed. Then a tapered implantation hard mask 21...

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Bibliographic Details
Main Authors UMIMOTO HIROYUKI, HANDA TAKATO
Format Patent
LanguageEnglish
Published 30.04.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can be made finer in size. SOLUTION: In an opening formed in a silicon substrate 1 for exposing a p-type region 2, a hard mask 21a composed of a BPSG film etc., is formed. Then a tapered implantation hard mask 21 is formed by rounding corners of the hard mask 21 by performing isotropic etching using an argon gas. After the mask 21 is formed, an n-layer 13 having an LDD structure is formed by obliquely implanting an ion of an n-type impurity into the p-type region 2 by using the hard mask 21. Thereafter, the mask 21 is removed. Consequently, the oblique ion implantation can be performed by using an implantation mask which is further reduced in thickness than a conventional mask. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020294906