RADIATION SENSITIVE NEGATIVE RESIST COMPOSITION FOR PATTERN FORMATION AND METHOD FOR FORMING PATTERN

PROBLEM TO BE SOLVED: To provide a radiation sensitive and negative resist composition to obtain patterns having high accuracy and high aspect ratio. SOLUTION: The negative resist composition contains an epoxy resin of formula (1) äin the formula, A is a skeleton expressed by formula (2), X in the f...

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Bibliographic Details
Main Authors SAKAI NOBUSHI, TADA KENTARO
Format Patent
LanguageEnglish
Published 30.04.2004
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
COMPOSITIONS BASED THEREON
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
MATERIALS THEREFOR
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:PROBLEM TO BE SOLVED: To provide a radiation sensitive and negative resist composition to obtain patterns having high accuracy and high aspect ratio. SOLUTION: The negative resist composition contains an epoxy resin of formula (1) äin the formula, A is a skeleton expressed by formula (2), X in the formula (2) includes formula (3) etc.}, a radiation sensitive cation polymerization initiator, and a solvent. The softening point of a resist film obtained after the composition is dried ranges from 30 to 120°C. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20030304550