CRYSTAL GROWTH METHOD AND MULTILAYER STRUCTURE FORMED BY THE METHOD

• Main Authors: KOBAYASHI NAOKI, NISHIDA TOSHIO, BAN TOMOYUKI
• Format: Patent
• Language: English
• Published: 15.04.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a crystal growth method which restrains generation of cracks and a multilayer structure which is formed by the method. SOLUTION: In the crystal growth method, a multilayer structure is formed by depositing an about 300 nm-thick AlN crystalline layer 2, an about 300 n...