CRYSTAL GROWTH METHOD AND MULTILAYER STRUCTURE FORMED BY THE METHOD

PROBLEM TO BE SOLVED: To provide a crystal growth method which restrains generation of cracks and a multilayer structure which is formed by the method. SOLUTION: In the crystal growth method, a multilayer structure is formed by depositing an about 300 nm-thick AlN crystalline layer 2, an about 300 n...

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Bibliographic Details
Main Authors KOBAYASHI NAOKI, NISHIDA TOSHIO, BAN TOMOYUKI
Format Patent
LanguageEnglish
Published 15.04.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a crystal growth method which restrains generation of cracks and a multilayer structure which is formed by the method. SOLUTION: In the crystal growth method, a multilayer structure is formed by depositing an about 300 nm-thick AlN crystalline layer 2, an about 300 nm-thick undoped GaN crystalline layer 3, an about 30 nm-thick undoped AlN lattice buffer layer 4 and an about 75 nm-thick undoped AlGaN crystalline layer 5 of Al composition of about 30% one by one on a sapphire substrate 1 of c-surface positive orientation (less than ±2°). COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020282611