CRYSTAL GROWTH METHOD AND MULTILAYER STRUCTURE FORMED BY THE METHOD

• Main Authors: KOBAYASHI NAOKI, NISHIDA TOSHIO, BAN TOMOYUKI
• Format: Patent
• Language: English
• Published: 15.04.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a crystal growth method which restrains generation of cracks and a multilayer structure which is formed by the method. SOLUTION: In the crystal growth method, a multilayer structure is formed by depositing an about 300 nm-thick AlN crystalline layer 2, an about 300 nm-thick undoped GaN crystalline layer 3, an about 30 nm-thick undoped AlN lattice buffer layer 4 and an about 75 nm-thick undoped AlGaN crystalline layer 5 of Al composition of about 30% one by one on a sapphire substrate 1 of c-surface positive orientation (less than ±2°). COPYRIGHT: (C)2004,JPO