METHOD FOR CLEANING PLASMA PROCESSOR
PROBLEM TO BE SOLVED: To provide a cleaning method of a plasma processor for easily removing a reactant in a reaction chamber, after a plasma etching processing. SOLUTION: The method is composed of a first process for plasma-etching a member to be etched 17, which is arranged in the reaction chamber...
Saved in:
Main Author | |
---|---|
Format | Patent |
Language | English |
Published |
08.04.2004
|
Edition | 7 |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To provide a cleaning method of a plasma processor for easily removing a reactant in a reaction chamber, after a plasma etching processing. SOLUTION: The method is composed of a first process for plasma-etching a member to be etched 17, which is arranged in the reaction chamber 11, by using SiCl4or BCl3and a second process for introducing a plasma of gas, comprising oxygen into the reaction chamber 11, after the first process. COPYRIGHT: (C)2004,JPO |
---|---|
Bibliography: | Application Number: JP20020273527 |