METHOD FOR CLEANING PLASMA PROCESSOR

PROBLEM TO BE SOLVED: To provide a cleaning method of a plasma processor for easily removing a reactant in a reaction chamber, after a plasma etching processing. SOLUTION: The method is composed of a first process for plasma-etching a member to be etched 17, which is arranged in the reaction chamber...

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Bibliographic Details
Main Author KUZUHARA TORU
Format Patent
LanguageEnglish
Published 08.04.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a cleaning method of a plasma processor for easily removing a reactant in a reaction chamber, after a plasma etching processing. SOLUTION: The method is composed of a first process for plasma-etching a member to be etched 17, which is arranged in the reaction chamber 11, by using SiCl4or BCl3and a second process for introducing a plasma of gas, comprising oxygen into the reaction chamber 11, after the first process. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020273527