III-GROUP NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD THEREFOR, AND III-GROUP NITRIDE SEMICONDUCTOR EPITAXIAL WAFER

PROBLEM TO BE SOLVED: To provide a manufacturing method for a III-group nitride semiconductor crystal whereby the high-quality nitride semiconductor crystal can be formed on a substrate, in a process having a comparably little change in temperature, by utilizing a semiconductor-crystal growing metho...

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Bibliographic Details
Main Authors OKUYAMA MINEO, YASUDA TAKENORI
Format Patent
LanguageEnglish
Published 25.03.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a manufacturing method for a III-group nitride semiconductor crystal whereby the high-quality nitride semiconductor crystal can be formed on a substrate, in a process having a comparably little change in temperature, by utilizing a semiconductor-crystal growing method using the substrate having an irregularly processed surface. SOLUTION: By feeding a III-group raw material to a substrate having an irregularly processed surface while adopting a V/III ratio not larger than 1,000 (inclusive of the case of the V/III ratio being zero), a III-group nitride semiconductor (the III-group nitride semiconductor is represented by InGaAlN) is formed. Thereafter, the vapor-phase epitaxy of a III-group nitride semiconductor crystal is performed by using the III-group raw material and a nitrogen raw material. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020258344