SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor memory device in which a high quality multilayer insulating film such as an ON film or an ONO film is formed at low temperatures, and to provide its manufacturing method. SOLUTION: After forming a lower silicon oxide film 102 on a sili...

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Bibliographic Details
Main Authors NAKAMURA MANABU, SERA KENTARO, TAKAGI HIDEO, UTSUNO ITSUHIRO, AZUMA MASAHIKO, KAJITA TATSUYA, NANSEI HIROYUKI
Format Patent
LanguageEnglish
Published 25.03.2004
Edition7
Subjects
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