SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURING METHOD

• Main Authors: NAKAMURA MANABU, SERA KENTARO, TAKAGI HIDEO, UTSUNO ITSUHIRO, AZUMA MASAHIKO, KAJITA TATSUYA, NANSEI HIROYUKI
• Format: Patent
• Language: English
• Published: 25.03.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor memory device in which a high quality multilayer insulating film such as an ON film or an ONO film is formed at low temperatures, and to provide its manufacturing method. SOLUTION: After forming a lower silicon oxide film 102 on a silicon region 101, a silicon film 103 is formed on the lower silicon oxide film 102, for example, by a thermal CVD method. Then, the silicon film 103 is completely nitrified by a plasma nitriding method so as to be substituted with a silicon nitride film 104. And then, the surface layer of the silicon nitride film 104 is oxided by a plasma oxidizing method so as to be substituted with an upper silicon oxide film 105, forming the ONO film 111 which is the multilayer insulating film composed of the lower silicon oxide film 102, the silicon nitride film 104, and the upper silicon film 105. COPYRIGHT: (C)2004,JPO