SEMICONDUCTOR DEVICE EQUIPPED WITH ELECTROSTATIC DISCHARGE PROTECTION MEANS

PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a means for protecting an IC (integrated circuit) integrated on a semiconductor substrate, from static discharge. SOLUTION: In the IC, a semiconductor n+ layer is formed so as to be contacted with a conductor layer (projected part...

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Bibliographic Details
Main Authors OKUMURA SABURO, KOJIMA SEIKI, YAMAMOTO HIROSHI
Format Patent
LanguageEnglish
Published 18.03.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with a means for protecting an IC (integrated circuit) integrated on a semiconductor substrate, from static discharge. SOLUTION: In the IC, a semiconductor n+ layer is formed so as to be contacted with a conductor layer (projected part) 51 below a bonding pad 2 and pn junctions are formed cylindrically in the direction of thickness of a chip between the lower surface of the semiconductor substrate 4 and the conductor layer 51, while the function of a diode 5 of positive direction characteristics is provided in a direction from the lower surface of the chip to the upper surface of the same to use it as the branched passage of electrostatic energy and retain a large resistance against charge. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020246263