METHOD FOR FORMING RESIST PATTERN

• Main Author: KATSUYAMA AKIKO
• Format: Patent
• Language: English
• Published: 18.03.2004
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern where crack is prevented when forming a minute pattern using a resist containing resin based containing no benzene ring in a main chain such as acryl resin and an acid forming agent. SOLUTION: A resist film 1 is made of the resist containing the acryl resin and the acid forming agent and the resist film 1 is partially exposed 4 with an ArF excimer laser for generating acid. Thereafter, with first thermal treatment, acid catalyzing reaction is accelerated. Thereafter, after stopping the reaction, a second thermal treatment is performed at a temperature equal to or higher than the glass transition point of the resist film and flowing of the resist film before development is carried out for reducing the stress to the resist film. Thereafter, development is performed. COPYRIGHT: (C)2004,JPO