METHOD FOR FORMING RESIST PATTERN
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern where crack is prevented when forming a minute pattern using a resist containing resin based containing no benzene ring in a main chain such as acryl resin and an acid forming agent. SOLUTION: A resist film 1 is made of the resis...
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Main Author | |
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Format | Patent |
Language | English |
Published |
18.03.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern where crack is prevented when forming a minute pattern using a resist containing resin based containing no benzene ring in a main chain such as acryl resin and an acid forming agent. SOLUTION: A resist film 1 is made of the resist containing the acryl resin and the acid forming agent and the resist film 1 is partially exposed 4 with an ArF excimer laser for generating acid. Thereafter, with first thermal treatment, acid catalyzing reaction is accelerated. Thereafter, after stopping the reaction, a second thermal treatment is performed at a temperature equal to or higher than the glass transition point of the resist film and flowing of the resist film before development is carried out for reducing the stress to the resist film. Thereafter, development is performed. COPYRIGHT: (C)2004,JPO |
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Bibliography: | Application Number: JP20020244257 |