SUBSTRATE PLACEMENT MEMBER AND SUBSTRATE TREATMENT APPARATUS USING SAME

• Main Author: HIGUCHI KIMIHIRO
• Format: Patent
• Language: English
• Published: 04.03.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a substrate placement member wherein erosion of an adhesive layer due to corrosive gas or plasma is hardly generated, and to provide a substrate treatment apparatus using the substrate mounting member. SOLUTION: In the substrate treatment apparatus wherein a substrate W is treated by corrosive gas or a plasma treatment, the substrate mounting member 3 for mounting the substrate is provided with a base member 8 which has a main metal body 8a and an insulating layer 8b for coating the periphery of the main body, an electrostatic chuck 9 for attracting the substrate which is arranged on the base member, and an adhesive layer 10 for sticking the base member 8 and the electrostatic chuck 9. The electrostatic chuck 9 is provided with a dielectric member 16 and an electrode 17 arranged in the dielectric member. The dielectric member 16 has a protrusion part 16a in the periphery which part 16a is so practically in contact with only an insulating layer 8b of the base member 8 that periphery of the adhesive layer 10 is not exposed, practically. COPYRIGHT: (C)2004,JPO