METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To prevent an yield of a semiconductor device from decreasing in dry cleaning in a manufacturing process of the device. SOLUTION: A wafer 4 is installed in a vacuum container 1. A main surface of the wafer 4 is cleaned by adopting in combination an electrical action and a chemi...

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Bibliographic Details
Main Authors IZAWA MASARU, MOMOI YOSHINORI, YOKOGAWA KATANOBU
Format Patent
LanguageEnglish
Published 26.02.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To prevent an yield of a semiconductor device from decreasing in dry cleaning in a manufacturing process of the device. SOLUTION: A wafer 4 is installed in a vacuum container 1. A main surface of the wafer 4 is cleaned by adopting in combination an electrical action and a chemical action of a plasma of a first gas seed generated by a plasma generating means 2, and a physical action of a frictional stress of a high-speed gas flow formed by a planar structure 5 disposed in the vicinity of the main surface of the wafer 4. The wafer 4 after cleaning is treated by a plasma of a second gas seed in the same container 1, and then discharged to the atmosphere. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020216011