LIGHT EMITTING SEMICONDUCTOR CHIP (LESC), SEMICONDUCTOR LIGHT EMITTING DEVICE (LED) HAVING LESC IN BASE CASING, SEMICONDUCTOR LED HAVING LESC IN NOTCH OF BASE CASING, AND LIGHT EMITTING SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR CHIP AT LEAST PARTIALLY IN TRANSPARENT ENVELOPE
PROBLEM TO BE SOLVED: To provide a light emitting semiconductor chip (LESC) that guarantees mass production which is technically simple due to extremely reproducible device characteristics. SOLUTION: The light emitting semiconductor chip (LESC) comprises a luminescence transformation layer affixed t...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English |
Published |
12.02.2004
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a light emitting semiconductor chip (LESC) that guarantees mass production which is technically simple due to extremely reproducible device characteristics. SOLUTION: The light emitting semiconductor chip (LESC) comprises a luminescence transformation layer affixed to the top of a semiconductor chip, and this luminescence transformation layer is at least partially transparent relative to a beam of a first wavelength range; and at least one phosphor that transforms the beam originating from the first wave range into a beam of a second wavelength range different from the first one. Thus the semiconductor light emitting device emitts a mixed beam composed of a beam of the first wavelength range and a beam of the second one. COPYRIGHT: (C)2004,JPO |
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Bibliography: | Application Number: JP20030355316 |