APPARATUS AND METHOD FOR FORMING FILM

• Main Authors: IKEDA FUMIHIDE, WATANABE TOMOJI, HORII SADAYOSHI, HOSHINO MASAKAZU
• Format: Patent
• Language: English
• Published: 12.02.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a film forming apparatus such as a CVD for forming a high-quality high dielectric constant gate insulating film with high throughput, and to provide a film forming method. SOLUTION: The film forming apparatus uses an organic metal compound as a first film formation raw material, introduces the organic metal compound into a reaction chamber 1 from a shower head 6 so that it opposes a wafer surface, and has an exhaust valve 76 for quickly exhausting residual gas in the shower head 6. Additionally, a second film forming raw material such as H2O, O3 is introduced to the reaction chamber 1 from a nozzle where a channel differs from that of the shower head 6. As a result, films can be formed by ALD and MOCVD methods by the same apparatus, and hence the high-quality high dielectric constant gate insulating film can be formed with high throughput. COPYRIGHT: (C)2004,JPO