MEASURING METHOD OF TEMPERATURE AND CONTROL METHOD OF EQUIPMENT TEMPERATURE

PROBLEM TO BE SOLVED: To provide a correctly measuring method of a temperature utilizing sheet resistance. SOLUTION: A silicon oxide film 12 of 3nm is formed on a silicon crystal substrate 10 of a monitor wafer 1 by oxygen, N2O or the like. Next, an impurity implanting region 11 is formed by implant...

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Bibliographic Details
Main Authors KAWASE FUMITOSHI, SHIBATA SATOSHI
Format Patent
LanguageEnglish
Published 05.02.2004
Edition7
Subjects
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Summary:PROBLEM TO BE SOLVED: To provide a correctly measuring method of a temperature utilizing sheet resistance. SOLUTION: A silicon oxide film 12 of 3nm is formed on a silicon crystal substrate 10 of a monitor wafer 1 by oxygen, N2O or the like. Next, an impurity implanting region 11 is formed by implanting boron ions into the surface of the wafer. The wafer is installed in a rapid heating device to apply heat treatment. Thereafter, the sheet resistance of the wafer is measured and a relation between a heat treatment temperature and the sheet resistance is obtained. The correct temperature upon heat treatment is obtained from the sheet resistance by obtaining the relation previously. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020193040