SUBMOUNT FOR NITRIDE SEMICONDUCTOR LASER, AND NITRIDE SEMICONDUCTOR LASER USING THIS

• Main Authors: MIZUNO TAKASHI, OFUJI YOSHIO, YABUKI YOSHIBUMI
• Format: Patent
• Language: English
• Published: 15.01.2004
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a submount for a nitride semiconductor laser which can prevent short circuit between electrodes by reducing the rate of defective goods. SOLUTION: The width of a welding layer 22 corresponding to a p-side electrode 61 is made narrower than the width of the p-side electrode 61. A squeeze-out preventing layer 23 under the welding layer 22 is provided with an exposed region 23A which is not coated with the welding layer 22 along two opposite sides 22D, 22E of the welding layer 22 and a side 22F cross them. The squeeze-out preventing layer 23 is formed of a metal which is not wettable to the welding layer 22, and can prevent the welding layer 22 from squeezing out in the sides 22D, 22E, 22F by means of the exposed region 23A. It is desirable that the side 22F corresponds to the front side of the laser chip 60. In the side 22G, the welding layer 22 coats the squeeze-out preventing layer 23 and a relief region 22H extended over the squeeze-out preventing layer 23 is provided. COPYRIGHT: (C)2004,JPO