SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To achieve a high withstand voltage driver that does not cause malfunction or element damage easily. SOLUTION: Two regions having different potential in a high breakdown voltage IC chip 10 (concretely speaking, a high breakdown voltage junction termination structure 23 and a GN...

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Bibliographic Details
Main Authors JINBO SHINICHI, SAITO JUN
Format Patent
LanguageEnglish
Published 08.01.2004
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To achieve a high withstand voltage driver that does not cause malfunction or element damage easily. SOLUTION: Two regions having different potential in a high breakdown voltage IC chip 10 (concretely speaking, a high breakdown voltage junction termination structure 23 and a GND reference circuit formation region 22 for surrounding a floating potential reference circuit formation region 21) are further surrounded by a trench structure 7. The trench structure 7 is formed by forming a trench and then by forming a high-concentration p+type region on the sidewall or by burying p+type doped polysilicon or an insulator into the trench. COPYRIGHT: (C)2004,JPO
Bibliography:Application Number: JP20020168131