COATING LIQUID COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM, PHOTORESIST LAMINATE BY USING THE SAME, AND METHOD FOR FORMING PHOTORESIST PATTERN

• Main Authors: HARAGUCHI TAKAYUKI, KUBOTA NAOTAKA, WAKIYA KAZUMASA, YOKOI SHIGERU
• Format: Patent
• Language: English
• Published: 03.12.2003
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a coating liquid composition for formation of an upper layer antireflection film to give an excellent effect of improving a pattern top profile for formation of a superfine photoresist pattern using a photoresist responding to ArF excimer laser. SOLUTION: The coating liquid composition is used to form an antireflection film deposited on a positive photoresist layer responding to ArF excimer laser. The coating liquid composition for formation of an antireflection film contains (a) a water-soluble film forming component, (b) at least one kind of fluorine compound in ≥4C perfluoroalkylcarboxylic acids and ≥5C perfluoroalkylsulfonic acids, (c) (c-1) a 1-4C fluoroakylsulfonic acid and/or (c-2) an acidic compound comprising a 1-4C hydrocarbon with one or more hydrogen atoms substituted by fluoroalkylsulfonyl groups (or one or more carbon atoms in the hydrocarbon group may be substituted with nitrogen atoms). The composition is used for the photoresist laminate and for the method for forming a photoresist pattern. COPYRIGHT: (C)2004,JPO