THIN FILM, METHOD OF FORMING THIN FILM, AND REFLECTION REDUCING FILM

• Main Author: OKA SHIGEKI
• Format: Patent
• Language: English
• Published: 17.10.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a thin film, in which coexistence of a low refractive index and abrasion-proof property is possible, method of forming the thin film, and a reflection reducing film. SOLUTION: The thin film formed on a base material has detailed unevenness on the outermost surface layer. The average interval of the unevenness, which is specified by JIS B 0601, is 10 nm or more and 400 nm or less, and the arithmetic mean roughness is 10 nm or more and 100 nm or less. COPYRIGHT: (C)2004,JPO