METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: KIYOTOSHI MASAHIRO, NAKAHIRA JUNYA
• Format: Patent
• Language: English
• Published: 03.10.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To form a satisfactory film by removing source gas which is remained in a source gas injector. SOLUTION: An apparatus for manufacturing a semiconductor device is provided with a reaction chamber (124) for performing chemical vapor deposition on a semiconductor wafer within the chamber, a source gas injector (125) for supplying the source gas into the reaction chamber, and vacuum pumps (106, 107) for reducing pressure in the source gas injector as well as in the reaction chamber. COPYRIGHT: (C)2004,JPO