LIQUID RAW MATERIAL FOR CVD AND CVD SYSTEM

• Main Authors: MIKAMI YOSHIHARU, NOGUCHI MASAHIRO
• Format: Patent
• Language: English
• Published: 02.10.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a liquid raw material for CVD which can dissolve even a material which causes many troubles in a conventional tetrahydrofuran (THF) solvent without troubles such as the occurrence of precipitations, which can be transferred through piping without clogging, and which can be applied to a solution vaporization system without the problem of vaporization efficiency. SOLUTION: A liquid raw material 9 for CVD is prepared by mixing one or more kinds of organometallic compounds into a solvent containing one or more kinds of polar solvents, and dissolving the compounds to a saturated state or below. The polar solvent contains at least one or more kinds selected from the derivatives of tetrahydrofuran (THF, C4H8O), and does not contain the tetrahydrofuran itself. Thus, the material which causes many troubles in the conventional THF solvent can be dissolved without troubles such as the occurrence of precipitations or the like and can also be transferred through piping 16 without clogging. COPYRIGHT: (C)2004,JPO