METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: KOMURO GENICHI, ENDO MITSUHIRO, KIKUCHI HIDEAKI, HIRAI NAOKI
• Format: Patent
• Language: English
• Published: 12.09.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To etch the side faces of a capacitor in a shape almost perpendicular to a substrate insulating film without forming a fence on the side face of the capacitor, in a method for manufacturing a semiconductor device having the step of etching an electrode material film for constituting the capacitor using a ferroelectric material or a high dielectric material. SOLUTION: Etching of a conductive film 15 to become an electrode 15a of the capacitor Q formed on a semiconductor substrate 1 is conducted in an atmosphere containing bromine. A heating temperature of the substrate 1 is set within a range of 300 to 600°C, or the etching of the film 15 is conducted in the atmosphere in which only hydrogen bromide and oxygen are externally supplied. COPYRIGHT: (C)2003,JPO