SEMICONDUCTOR MEMORY DEVICE

• Main Author: KUROKI KOICHI
• Format: Patent
• Language: English
• Published: 22.08.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

PROBLEM TO BE SOLVED: To provide a semiconductor memory device whose sense amplifier region is reduced in size. SOLUTION: The semiconductor memory device comprises a sense amplifier transistor connected to a complementary bit line of a memory cell array and a sense amplifier driver transistor for driving the sense amplifier transistor. The sense amplifier transistor and the sense amplifier driver transistor comprise a gate electrode, respectively, dividing a common diffusion layer region formed on a surface of a semiconductor substrate into two parts. These gate electrodes are placed on a boundary of the diffusion layer region. COPYRIGHT: (C)2003,JPO