SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor memory device whose sense amplifier region is reduced in size. SOLUTION: The semiconductor memory device comprises a sense amplifier transistor connected to a complementary bit line of a memory cell array and a sense amplifier driver transistor for dr...

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Bibliographic Details
Main Author KUROKI KOICHI
Format Patent
LanguageEnglish
Published 22.08.2003
Edition7
Subjects
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor memory device whose sense amplifier region is reduced in size. SOLUTION: The semiconductor memory device comprises a sense amplifier transistor connected to a complementary bit line of a memory cell array and a sense amplifier driver transistor for driving the sense amplifier transistor. The sense amplifier transistor and the sense amplifier driver transistor comprise a gate electrode, respectively, dividing a common diffusion layer region formed on a surface of a semiconductor substrate into two parts. These gate electrodes are placed on a boundary of the diffusion layer region. COPYRIGHT: (C)2003,JPO
Bibliography:Application Number: JP20020032103