SEMICONDUCTOR MEMORY DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor memory device whose sense amplifier region is reduced in size. SOLUTION: The semiconductor memory device comprises a sense amplifier transistor connected to a complementary bit line of a memory cell array and a sense amplifier driver transistor for dr...

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Bibliographic Details
Main Author KUROKI KOICHI
Format Patent
LanguageEnglish
Published 22.08.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor memory device whose sense amplifier region is reduced in size. SOLUTION: The semiconductor memory device comprises a sense amplifier transistor connected to a complementary bit line of a memory cell array and a sense amplifier driver transistor for driving the sense amplifier transistor. The sense amplifier transistor and the sense amplifier driver transistor comprise a gate electrode, respectively, dividing a common diffusion layer region formed on a surface of a semiconductor substrate into two parts. These gate electrodes are placed on a boundary of the diffusion layer region. COPYRIGHT: (C)2003,JPO
Bibliography:Application Number: JP20020032103