SILICON CARBIDE SEMICONDUCTOR ELEMENT

• Main Authors: YAMAMOTO TETSUYA, TANUMA TOSHIO
• Format: Patent
• Language: English
• Published: 04.07.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To solve a problem that it is difficult to obtain low-ion resistivity in a conventional diode at low breakdown voltage range (not more than 600 V), and integrate with a switching element in an inverter circuit, etc. SOLUTION: A planar silicon carbide semiconductor element is fo...