SILICON CARBIDE SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To solve a problem that it is difficult to obtain low-ion resistivity in a conventional diode at low breakdown voltage range (not more than 600 V), and integrate with a switching element in an inverter circuit, etc. SOLUTION: A planar silicon carbide semiconductor element is fo...

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Bibliographic Details
Main Authors YAMAMOTO TETSUYA, TANUMA TOSHIO
Format Patent
LanguageEnglish
Published 04.07.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To solve a problem that it is difficult to obtain low-ion resistivity in a conventional diode at low breakdown voltage range (not more than 600 V), and integrate with a switching element in an inverter circuit, etc. SOLUTION: A planar silicon carbide semiconductor element is formed in a silicon carbide semiconductor layer 22 of a main surface side of a substrate 14, and it solves the problem by utilizing a horizontal Schottky diode including on the main surface side of the substrate 14 both a rectifying electrode 28 forming a Schottky conjunction and a non-rectifying electrode 30 forming an ohmic contact. COPYRIGHT: (C)2003,JPO
Bibliography:Application Number: JP20010386967