SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

• Main Authors: ICHIHARA SEIICHI, KANEMITSU NOBUYA, TOJO SHINJI
• Format: Patent
• Language: English
• Published: 27.06.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To improve the bending slit part of a lead of a semiconductor device in bending strength and to restrain a tin plating layer from affecting the manufacturing of a semiconductor device, even if the tin plating layer formed on a lead becomes defective. SOLUTION: In a semiconductor device, a tin plating layer is formed on the copper lead of a tape carrier package; a copper foil 2 is provided on an insulating tape 1 and formed into a lead 3 through etching; and a first solder resist layer 9 is applied on the bent part of the lead 3, a first tin-plating operation is performed on the lead 3 in this state, a second solder resist layer is applied on a part of the lead 3 other than an outer lead and an inner lead which are plated with tin once, the outer lead and the inner lead once plated with tin are plated with tin once again, the inner lead and the electrode of a semiconductor chip are electrically connected together through a gold bump, and the semiconductor chip and the electrical joint are sealed up with resin for manufacturing the semiconductor device. COPYRIGHT: (C)2003,JPO