THIN FILM PIEZOELECTRIC RESONATOR AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a thin film piezoelectric resonator and its manufacturing method, the resonator having a large electro-mechanical coupling coefficient and a compact device size capable of being easily manufactured. SOLUTION: The thin film piezoelectric resonator is provided with a s...

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Bibliographic Details
Main Authors SANO KENYA, YASUMOTO YASUAKI, KAWAKUBO TAKASHI, SHIMIZU TATSUO, YANASE NAOKO, OHARA RYOICHI, ABE KAZUHIDE
Format Patent
LanguageEnglish
Published 06.06.2003
Edition7
Subjects
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
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Summary:PROBLEM TO BE SOLVED: To provide a thin film piezoelectric resonator and its manufacturing method, the resonator having a large electro-mechanical coupling coefficient and a compact device size capable of being easily manufactured. SOLUTION: The thin film piezoelectric resonator is provided with a single crystal substrate (1), and a resonator (8) composed of a lower electrode (4), a ferroelectric layer (59, and an upper electrode (6) collectively laminated on the single crystal substrate across an air gap (V), wherein each of the lower electrode and the ferroelectric layer constituting the resonator has an epitaxial growth relationship with respect to the single crystal substrate, and the resonator is supported on the single crystal substrate through the air gap by the ferroelectric layer extended around the single crystal substrate. COPYRIGHT: (C)2003,JPO
Bibliography:Application Number: JP20010358356