SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability and high production efficiency capable of surely and simply flattening an irregular face by subsequent CMP treatment even when the irregular face is produced on an insulating inter-layer film before the CMP treatment and...

Full description

Saved in:
Bibliographic Details
Main Authors IZUMITANI JUNKO, TAKEWAKA HIROMOTO, FUJIKI AKIMASA
Format Patent
LanguageEnglish
Published 06.06.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability and high production efficiency capable of surely and simply flattening an irregular face by subsequent CMP treatment even when the irregular face is produced on an insulating inter-layer film before the CMP treatment and its manufacturing method. SOLUTION: The manufacturing method of the semiconductor device provided with a CMP treatment process for performing CMP treatment on the insulating inter-layer film 8 is provided with a process for forming an erosion induction part N producing erosion during a CMP treatment process on an area corresponding to a projection face M out of the irregular face formed on the insulating inter-layer film 8 before the CMP treatment process. COPYRIGHT: (C)2003,JPO
Bibliography:Application Number: JP20010359808