PATTERN FORMATION MATERIAL AND PATTERN FORMATION METHOD

• Main Authors: ENDO MASATAKA, SASAKO MASARU, UEDA MITSURU, KISHIMURA SHINJI, FUJIGAYA TAKEHIKO
• Format: Patent
• Language: English
• Published: 06.06.2003
• Edition: 7
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES; THEIR PREPARATION OR CHEMICAL WORKING-UP; USE OF INORGANIC OR NON-MACROMOLECULAR ORGANIC SUBSTANCES ASCOMPOUNDING INGREDIENTS

PROBLEM TO BE SOLVED: To obtain a resist pattern having a good pattern shape when a resist pattern is formed using exposing light having a wavelength of ≤180 nm band with minimally producing scum. SOLUTION: A pattern formation material comprising a base resin containing a unit represented by formula 1 and a unit represented by formula 2 and an acid generator is provided. In the formulae, R1and R2are the same or different and each H, Cl, F, alkyl or fluoroalkyl; R3is a protecting group which is released by an acid; m is an integer of 0-5; and a and b satisfy 0<a<1, 0<b<1 and 0<a+b≤1. COPYRIGHT: (C)2003,JPO