PATTERN FORMATION MATERIAL AND PATTERN FORMATION METHOD
PROBLEM TO BE SOLVED: To obtain a resist pattern having a good pattern shape when a resist pattern is formed using exposing light having a wavelength of ≤180 nm band with minimally producing scum. SOLUTION: A pattern formation material comprising a base resin containing a unit represented by formula...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
06.06.2003
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To obtain a resist pattern having a good pattern shape when a resist pattern is formed using exposing light having a wavelength of ≤180 nm band with minimally producing scum. SOLUTION: A pattern formation material comprising a base resin containing a unit represented by formula 1 and a unit represented by formula 2 and an acid generator is provided. In the formulae, R1and R2are the same or different and each H, Cl, F, alkyl or fluoroalkyl; R3is a protecting group which is released by an acid; m is an integer of 0-5; and a and b satisfy 0<a<1, 0<b<1 and 0<a+b≤1. COPYRIGHT: (C)2003,JPO |
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Bibliography: | Application Number: JP20020250215 |