METHOD AND APPARATUS FOR EVALUATING FILM

• Main Authors: TSUKAMOTO TOSHIYUKI, NISHISATO HIROSHI
• Format: Patent
• Language: English
• Published: 23.04.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS; PHYSICS; SEMICONDUCTOR DEVICES; TESTING

PROBLEM TO BE SOLVED: To provide a method and an apparatus for the evaluating a film wherein, when the film quality of a nitride film on a substrate is evaluated, the film quality can be evaluated precisely and absolutely even when the nitride film is an extremely thin film. SOLUTION: In the film evaluating apparatus 100, a film measuring part 101 to which a controller 138 is connected is coupled to a film modification part 1 via a conveyance part 200. When the film is evaluated, an Si wafer W on which an Six Ny film has been formed is housed in the part 1, the Si wafer W is heated, H2 gas and O2 gas are supplied onto the Si wafer W so as to be mixed, and an SiO2 film is formed on the Six Ny film. Then the Si wafer W is transferred to the part 101, the film quality of both films is measured by spectral ellipsometry, and the film formation speed of the SiO2 film is calculated in the controller 138. Whether the film quality is satisfactory or not is evaluated on the basis of the measured value of the obtained film formation speed of the SiO2 film.