COPPER PLATING SOLUTION FOR EMBEDDING FINE WIRING AND COPPER PLATING METHOD USING THE SAME

PROBLEM TO BE SOLVED: To provide a copper plating solution which is capable of performing a plating treatment of a wafer surface, as a surface to be plated, subjected to formation of fine wiring having spacings of a sub-μm level and coated with copper as a seed metallic film, so as to suppress disso...

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Bibliographic Details
Main Authors TOTSUKA TAKASHI, KUZUSHIMA TOSHIO
Format Patent
LanguageEnglish
Published 09.04.2003
Edition7
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a copper plating solution which is capable of performing a plating treatment of a wafer surface, as a surface to be plated, subjected to formation of fine wiring having spacings of a sub-μm level and coated with copper as a seed metallic film, so as to suppress dissolving of the seed metallic film and to embed the inside of the microspacings by the copper without defects. SOLUTION: This plating solution contains 100 to 300 g/L copper sulfate as a copper sulfate pentahydrate, 5 to 300 g/L sulfuric acid, 20 to 200 mg/L chlorine, 0.05 to 20 g/L polymeric surfactant for suppressing an electrodeposition reaction, 1 to 100 mg/L sulfur-base saturated organic compound for accelerating a deposition rate, 0.01 to 10 mg/L leveling agent of a polymeric amine compound and 0.025 to 25 g/L reducing agent for stabilizing the copper plating solution.
Bibliography:Application Number: JP20010344200