POWER SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a power MOS-FET whose ON-resistance is lowered in a superjunction structure and whose built-in diode has inverse recovery characteristics in a soft recovery waveform. SOLUTION: This power MOS-FET has an n-type drift layer 2 inserted on the drain side of its vertical...

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Bibliographic Details
Main Authors OMURA ICHIRO, YAMAGUCHI SHOICHI, ONO SHOTARO, AIDA SATOSHI, SAITO WATARU
Format Patent
LanguageEnglish
Published 04.04.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a power MOS-FET whose ON-resistance is lowered in a superjunction structure and whose built-in diode has inverse recovery characteristics in a soft recovery waveform. SOLUTION: This power MOS-FET has an n-type drift layer 2 inserted on the drain side of its vertical superjunction structure comprising an n-type layer 3 and a p-type resurf layer 4. When a high voltage is applied to the MOS-FET, the n-type layer 3 and the p-type resurf layer 4 are completely depleted, and the impurity concentration of the n-type drift layer 2 is lower than the impurity concentration of the n-type layer 3.
Bibliography:Application Number: JP20010298311