METHOD AND APPARATUS FOR DEPOSITING THIN FILM OF CRYSTALLINE COMPOUND ON SHEET BASE MATERIAL

• Main Authors: AKUTSU HIDEKAZU, TANIDA KAZUTOSHI, SHIMIZU TAKASHI, OTSU SHIGEMI
• Format: Patent
• Language: English
• Published: 03.04.2003
• Edition: 7
• Subjects: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PERFORMING OPERATIONS; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; THEIR RELEVANT APPARATUS; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a method for depositing a crystalline thin film in which a step of depositing an amorphous thin film or the like and a step of changing the thin film into the crystalline thin film can be continuously performed, and each step can be easily performed at a low temperature, and an apparatus therefor. SOLUTION: The method for depositing the crystalline thin film on a base sheet comprises a first step of depositing an amorphous thin film or the like on the continuously carried base sheet under a vacuum or low gas pressure atmosphere, and a second step of irradiating the thin film with the light of the wavelength absorbed by the thin film while maintaining the base sheet at the temperature of 50-300 deg.C under the vacuum condition or under the low gas pressure. The apparatus for the method comprises a first chamber having a means of depositing the amorphous thin film or the like and a means of keeping the inside of the chamber under a vacuum or low gas pressure atmosphere, a second chamber having a means of maintaining the base sheet at the temperature of 50-300 deg.C, a light irradiating means of irradiating the light of the wavelength absorbed by the thin film, and a means of maintaining the inside of the chamber under a vacuum or gas atmosphere, and a base sheet carrying means.