SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To make a through hole finer and obtain a sufficient grounding area for a semiconductor element, in such a semiconductor device that the semiconduc tor element is formed on one main surface of a semiconductor growth substrate, and the through hole formed in the semiconductor gr...

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Bibliographic Details
Main Authors MIYAMOTO HIRONOBU, TSUDA MICHINOBU, HAYAMA NOBUYUKI
Format Patent
LanguageEnglish
Published 14.03.2003
Edition7
Subjects
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Summary:PROBLEM TO BE SOLVED: To make a through hole finer and obtain a sufficient grounding area for a semiconductor element, in such a semiconductor device that the semiconduc tor element is formed on one main surface of a semiconductor growth substrate, and the through hole formed in the semiconductor growth substrate is used to connect electrically the semiconductor element through the other main surface side thereof. SOLUTION: A through hole formed in a semiconductor growth substrate is comprised of a first hole that is made large in diameter on the other main surface of the semiconductor growth substrate, and a second hole that is made small in diameter and is communicated with the first hole.
Bibliography:Application Number: JP20010262945