SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To make a through hole finer and obtain a sufficient grounding area for a semiconductor element, in such a semiconductor device that the semiconduc tor element is formed on one main surface of a semiconductor growth substrate, and the through hole formed in the semiconductor gr...

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Bibliographic Details
Main Authors MIYAMOTO HIRONOBU, TSUDA MICHINOBU, HAYAMA NOBUYUKI
Format Patent
LanguageEnglish
Published 14.03.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To make a through hole finer and obtain a sufficient grounding area for a semiconductor element, in such a semiconductor device that the semiconduc tor element is formed on one main surface of a semiconductor growth substrate, and the through hole formed in the semiconductor growth substrate is used to connect electrically the semiconductor element through the other main surface side thereof. SOLUTION: A through hole formed in a semiconductor growth substrate is comprised of a first hole that is made large in diameter on the other main surface of the semiconductor growth substrate, and a second hole that is made small in diameter and is communicated with the first hole.
Bibliography:Application Number: JP20010262945