HALFTONE TYPE PHASE SHIFT MASK AND METHOD FOR PRODUCING THE SAME

PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask with a light shielding frame disposed on a halftone material film around an effective region including a main pattern without adding a photomask producing step and to provide a method for producing the phase shifting mask. SOLUTION: A...

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Bibliographic Details
Main Author MARUMO TOSHIYUKI
Format Patent
LanguageEnglish
Published 12.03.2003
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a halftone type phase shift mask with a light shielding frame disposed on a halftone material film around an effective region including a main pattern without adding a photomask producing step and to provide a method for producing the phase shifting mask. SOLUTION: A halftone material film 11 and a resist film 21 are formed on a transparent substrate 1 consisting of synthetic quartz or the like and the resist film 21 is subjected to a series of patterning procedures such as patternwise exposure and development to form a resist pattern 21a on the halftone material film 11. The halftone material film 11 is then dry-etched through the resist pattern 21a as a mask, the resist pattern 21a is removed with a special removing solution and a separately fabricated light shielding frame 31 is stuck to a prescribed position of the resulting halftone type phase shift mask of an intermediate stage to obtain the objective halftone type phase shift mask 100.
Bibliography:Application Number: JP20010264135