MULTIBEAM SEMICONDUCTOR LASER ELEMENT

• Main Authors: ANZAI SHINICHI, UCHIDA SHIRO, YABUKI YOSHIBUMI, TOJO TAKESHI, GOTO OSAMU, HINO TOMOKIMI, IKEDA MASAO
• Format: Patent
• Language: English
• Published: 07.03.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser element where the light output of each beam is uniform and alignment is easy. SOLUTION: The multibeam semiconductor laser element 40 is a GaN-based multibeam semiconductor laser element having four laser stripes 42A to D for emitting laser beams with the same wavelength. Each laser stripe has a p-side common electrode 48 on a mesa 46 formed on a sapphire substrate 44, and has each of active regions 50A to D. Two n-side electrodes 52A and B are provided in a contact layer 54 by the mesa as a common counter electrode opposite to the p-side electrode 48. Distance A between the laser stripes 42A and 42D should be 100 μm or less. Distance B1 between the laser stripe 42A and the laser side end section of the n-side electrode 52B should be 150 μm or less, and distance B2 between the laser stripe 42D and the laser side end section of the n-side electrode 52B should be 150 μm or less.