GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LASER

PROBLEM TO BE SOLVED: To solve the problem that ripples appear in far field images and interrupt the concentration of laser spot light, in a gallium nitride-based compound semiconductor laser, having a ridge optical waveguide-type stripe structure. SOLUTION: A gallium nitride-based compound semicond...

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Bibliographic Details
Main Authors KAWADA YASUHIRO, MATSUYAMA YUJI
Format Patent
LanguageEnglish
Published 31.01.2003
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:PROBLEM TO BE SOLVED: To solve the problem that ripples appear in far field images and interrupt the concentration of laser spot light, in a gallium nitride-based compound semiconductor laser, having a ridge optical waveguide-type stripe structure. SOLUTION: A gallium nitride-based compound semiconductor laser has a light-absorbing region, which is formed by introducing impurity atoms to a position separated from a position immediately underlying a ridge for controlling the spread of a horizontal lateral mode, which causes ripples in far field images. The impurity atoms introduced for forming the light-absorbing region can be those of any elements, except Cu and Cr, and the region must be formed separately from a region immediately underlying the ridge, by taking the movement of the introduced atoms caused by heat diffusion into consideration.
Bibliography:Application Number: JP20010212258