METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: YODA TAKASHI, IKEGAMI HIROSHI, NAKADA RENPEI
• Format: Patent
• Language: English
• Published: 31.01.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device, which can manufacture the semiconductor device whose performance and quality hardly deteriorate and whose reliability is hardly impaired. SOLUTION: Varnish-like methylpolysiloxane is applied onto a substrate 2 and is heated; and a first interlayer insulating film 3 is formed. First interlayer wiring grooves 7 are formed in the insulation film 3. First layer TaN films 8 and first layer Cu wirings 4 are formed in the grooves 7. Plasma processing is conducted to the surface parts of the film 3 and wirings 4 for thirty seconds, by using CH4 in a plasma state. A first layer SiN film 5 is formed on the film 3 by a plasma CVD method by using SiH4 gas and NH3 gas. An insulation film 9, whose quality is similar to the insulating film 3, is formed on the film 5, and second layer wiring grooves 10 and an interlayer connection wiring hole 11 are formed. An oxidized film on the wirings 4 is removed by wet etching. Second layer Cu wirings 12, an interlayer connection Cu wiring 13 and second layer TaN films 14 are formed in the grooves 10 and the hole 11.