MOLECULAR BEAM EPITAXY DEVICE AND ITS MAINTENANCE METHOD

• Main Authors: WATANABE KEIICHIRO, UNEYAMA KAZUHIRO
• Format: Patent
• Language: English
• Published: 29.01.2003
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide an MBE device in which the time necessary for the maintenance of a shroud, essential in the operation of the MBE device under ultra-high vacuum, is shortened and which exhibits enhanced operation efficiency, and to provide a method for the maintenance of the same. SOLUTION: Process gases (Ar, N2 , He, H2 , O2 , Xe, Ne, Kr or the like) are introduced into a chamber, and then RF or DC electric power is supplied to the shroud so as to generate plasma by using the chamber and the shroud as the electrodes and to reversely sputter the surface of the shroud. Thereby, adsorbed materials on the surface of the shroud can be removed.