SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• Main Author: NAGAI YUKIHIRO
• Format: Patent
• Language: English
• Published: 10.01.2003
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacitor of which the thickness is less fluctuated even if a dielectric film having a low coverage is used, and to provide a manufacturing method thereof. SOLUTION: This semiconductor device comprises a first capacitor and a second capacitor adjacent to each other, and each of which the lower electrode 4a is electrically connected to an impurity region 14 in a semiconductor substrate 1 and the upper electrode is electrically connected to an external wiring. Each capacitor comprises the lower electrode 4a, a dielectric film 5a formed on the lower electrode 4a, having a peripheral wall surface continuous to the peripheral wall surface of the lower electrode 4a, a first upper electrode 6a formed on the dielectric film, and a second upper electrode 6 formed on the first upper electrode. Additionally, the semiconductor device comprises a partitioning insulation film for covering the lower electrode and the dielectric layer between capacitors, and the second upper electrode is in contact with the upper surface of the partitioning insulation film.