PLASMA ETCHING APPARATUS, PLASMA ETCHING METHOD, AND SEMICONDUCTOR DEVICE

• Main Authors: TAKI MASAKAZU, SHINTANI KENJI, ODERA HIROKI
• Format: Patent
• Language: English
• Published: 26.12.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To realize a high etching selectivity to the base layer of an object to be processed while etching the object accurately. SOLUTION: The plasma etching apparatus includes an electrode 7 positioned within a processing chamber 1 to carry a wafer substrate 8 thereon, and a high frequency power source 10 for applying a high frequency power to the electrode 7 via a high frequency power supply line to etch a film on the wafer substrate 8 by plasma. The minimum amplitude position of a standing wave generated in the high frequency power supply line is aligned with the position of the electrode 7. In the plasma etching method, under a condition that the minimum amplitude position of the standing wave generated in the high frequency power supply line is aligned with the position of the electrode 7, a high frequency power is applied to the electrode 7 to etch the above film. The semiconductor device is manufactured with use of the above plasma etching apparatus or by the plasma etching method.