MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING DEEP SUB-COLLECTOR REGION

PROBLEM TO BE SOLVED: To provide a method for forming a BiCMOS device comprising a deep sub-collector region and a self-aligning mark. SOLUTION: There are provided a step (a) where a layer with a first pattern comprising a thick dielectric material is formed on the surface of a material stack formed...

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Bibliographic Details
Main Authors MALINOWSKI JOHN C, COOLBAUGH DOUGLAS D, LANZEROTTI LOUIS D
Format Patent
LanguageEnglish
Published 20.12.2002
Edition7
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a method for forming a BiCMOS device comprising a deep sub-collector region and a self-aligning mark. SOLUTION: There are provided a step (a) where a layer with a first pattern comprising a thick dielectric material is formed on the surface of a material stack formed on a semiconductor substrate through lithography, a step (b) where high energy/high dose injection is performed via an opening of the first layer as well as the material stack to form at least one deep sub-collector region in the semiconductor substrate, a step (c) where a layer with a second pattern (photoresist or dielectrics) is formed by lithography, and a step (d) where etching is performed through the material stack for forming an alignment mark in the semiconductor substrate, which is positioned below, using the layer with the first pattern as an alignment mark mask.
Bibliography:Application Number: JP20020101203