METHOD FOR GROWING SINGLE CRYSTAL

• Main Authors: MINAMI MORIO, KUBO TAKAYUKI, MIYABE HIROSHI
• Format: Patent
• Language: English
• Published: 18.12.2002
• Edition: 7
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To suppress the lowering of the yield caused by the evaporation of SiO by high pressure dissolution, and to prevent the fixing of a raw material and the formation of dislocations in a pulled crystal caused by the deformation of a crucible by the fixing, which cause problems in the high pressure dissolution. SOLUTION: When the raw material 10 is dissolved in a crucible 3, the pressure in a furnace is adjusted to be high (60 to 400 mbar) at the first half of the dissolution process and low (<=60 mbar) at the last half of the dissolution process. After dissolving the raw material, the pressure in the furnace at a crystal pulling process is adjusted to be <=60 mbar.