SEMICONDUCTOR LIGHT-EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a high reliability semiconductor light-emitting device having less change due to aging. SOLUTION: In the semiconductor light-emitting device, where a one conductivity-type semiconductor layer 2, an inverse conductivity-type semiconductor layer 3, and an inverse condu...

Full description

Saved in:
Bibliographic Details
Main Author OSAKI TETSUHIRO
Format Patent
LanguageEnglish
Published 06.12.2002
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:PROBLEM TO BE SOLVED: To provide a high reliability semiconductor light-emitting device having less change due to aging. SOLUTION: In the semiconductor light-emitting device, where a one conductivity-type semiconductor layer 2, an inverse conductivity-type semiconductor layer 3, and an inverse conductivity-type electrode 4 are successively formed on a substrate 1, a one conductivity-type electrode 5 is formed on the back side of the substrate 1, and further the inverse conductivity-type semiconductor layer 3 is composed by laminating at least a light-emitting layer 3a, having an atomic composition of (Ga1- XAlX)As and a cladding layer 3b which has an atomic composition of (Ga1- YAlY)As, the film thickness of the light-emitting layer 3a is set to 0.38 μm or less for prescribing to 0.15<=X<=0.3, 0.2<=Y<=0.3, Y/X<=1.18.
Bibliography:Application Number: JP20010161507